SK Hynix HMT425S6CFR6A-PB 2GB vs SK Hynix HMAA2GS6CJR8N-XN 16GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 55

左右 25% 更低的延时

SK Hynix HMAA2GS6CJR8N-XN 16GB

需要考虑的原因
SK Hynix HMAA2GS6CJR8N-XN 16GB

报告一个错误

更快的读取速度，GB/s

16 10.1

测试中的平均数值
更快的写入速度，GB/s

12.9 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 55
读取速度，GB/s

10.1 16.0
写入速度，GB/s

7.1 12.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1484 2699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

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Team Group Inc. Vulcan-1600 4GB

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Apacer Technology D12.2326WH.001 16GB

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Corsair CMSX32GX4M1A2666C18 32GB

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Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-3200C16-16GFX 16GB

G Skill Intl F4-3200C16-16GFX 16GB