Smart Modular SG564568FG8N6KF-Z2 2GB vs Patriot Memory (PDP Systems) 2400 C17 8GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

低于PassMark测试中的延时，ns

70 73

左右 4% 更低的延时
更快的读取速度，GB/s

4 14.4

测试中的平均数值

Patriot Memory (PDP Systems) 2400 C17 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 2400 C17 8GB

报告一个错误

更快的写入速度，GB/s

7.8 3,071.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Patriot Memory (PDP Systems) 2400 C17 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 73
读取速度，GB/s

4,372.7 14.4
写入速度，GB/s

3,071.4 7.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 1842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Kingston HP32D4U8S8ME-8X 8GB

Kingston HP32D4U8S8ME-8X 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Micron Technology 16ATF4G64HZ-3G2E1 32GB