STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMW16GX4M2D3600C16 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C16 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 21.8

测试中的平均数值

Corsair CMW16GX4M2D3600C16 8GB

需要考虑的原因
Corsair CMW16GX4M2D3600C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 63

左右 -133% 更低的延时
更快的写入速度，GB/s

17.2 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMW16GX4M2D3600C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 27
读取速度，GB/s

3,231.0 21.8
写入速度，GB/s

1,447.3 17.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 3788

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB