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takeMS International AG TMS2GB264D083805EV 2GB
Mushkin MR[A/B]4U346GJJM8G 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Mushkin MR[A/B]4U346GJJM8G 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 57
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 19.4
    测试中的平均数值
Mushkin MR[A/B]4U346GJJM8G 8GB 需要考虑的原因
Mushkin MR[A/B]4U346GJJM8G 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.7 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Mushkin MR[A/B]4U346GJJM8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 57
  • 读取速度，GB/s
    3,757.3 left arrow 19.4
  • 写入速度，GB/s
    1,457.4 left arrow 9.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    557 left arrow 2253

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Mushkin MR[A/B]4U346GJJM8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Mushkin MR[A/B]4U346GJJM8G 8GB
Mushkin MR[A/B]4U346GJJM8G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CM4B8G1J2400A16K2-ON 8GB
Corsair CM4B8G1J2400A16K2-ON 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Transcend Information JM3200HLB-16G 16GB
Transcend Information JM3200HLB-16G 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
UMAX Technology 16GB
UMAX Technology 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston HP26D4S9S8MHF-8 8GB
Kingston HP26D4S9S8MHF-8 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2666C19-8GRS 8GB
G Skill Intl F4-2666C19-8GRS 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation T 4GB
Avexir Technologies Corporation T 4GB
内存RAM
Kingston HP24D4U7S8MH-8 8GB
Kingston HP24D4U7S8MH-8 8GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
内存RAM