RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块,按延迟增加排序
№
带宽
延迟, ns
读取速度,GB/s
写入速度,GB/s
№
1101
RAM
Kingston 1G-UDIMM 1GB
Latency
57
Read speed
3,469.4
Write speed
1,591.2
№
1102
RAM
Kingston KWK007-ELC 1GB
Latency
57
Read speed
3,908.2
Write speed
1,753.0
№
1103
RAM
Apacer Technology 78.A1GA0.9H4 2GB
Latency
57
Read speed
4,141.8
Write speed
1,957.8
№
1104
RAM
Silicon Integrated Systems BJ2F1SAD31 1GB
Latency
57
Read speed
3,513.3
Write speed
1,596.5
№
1105
RAM
Crucial Technology RM25664AA800.16FH 2GB
Latency
57
Read speed
4,632.8
Write speed
2,178.6
№
1106
RAM
Crucial Technology RM25664AA800.16FH? 2GB
Latency
57
Read speed
4,778.8
Write speed
2,600.0
№
1107
RAM
SK Hynix HMP351U6AFR8C-S6 4GB
Latency
57
Read speed
5,006.7
Write speed
2,080.3
№
1108
RAM
Ramaxel Technology RML1320HC48D8F-800 2GB
Latency
57
Read speed
4,799.8
Write speed
2,364.2
№
1109
RAM
Apacer Technology 78.A2G86.9L5 2GB
Latency
57
Read speed
4,159.2
Write speed
1,467.7
№
1110
RAM
OCZ OCZ2RPR800C42G 2GB
Latency
57
Read speed
5,591.5
Write speed
3,292.9
№
1111
RAM
Kreton Corporation 51728xxxx78x47xxxx 4GB
Latency
57
Read speed
3,275.8
Write speed
1,340.0
№
1112
RAM
SK Hynix HYMP125U64CP8-Y5 2GB
Latency
57
Read speed
4,532.8
Write speed
2,141.2
№
1113
RAM
Elpida EBE10UE8ACWA-8G-E 1GB
Latency
57
Read speed
5,012.0
Write speed
2,201.8
№
1114
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U64BP8-C4 1GB
Latency
57
Read speed
3,461.5
Write speed
1,619.8
№
1115
RAM
Samsung KBL78T672G2SE6 2GB
Latency
57
Read speed
4,150.1
Write speed
1,462.8
№
1116
RAM
OCZ OCZ2V8002G.SYX 2GB
Latency
57
Read speed
4,003.8
Write speed
1,717.2
№
1117
RAM
SK Hynix HYMP512U64BP8-C4 1GB
Latency
57
Read speed
3,478.8
Write speed
1,017.3
№
1118
RAM
Mushkin 991760 (996760) 2GB
Latency
57
Read speed
5,384.0
Write speed
3,161.7
№
1119
RAM
Elpida EBE21AE8ACWA-6E-E 2GB
Latency
57
Read speed
4,205.0
Write speed
1,649.0
№
1120
RAM
ASint Technology WLZ2128M8-JGE 2GB
Latency
57
Read speed
3,905.4
Write speed
1,601.6
«
53
54
55
56
57
58
»
最新比较
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2666C15-8GRKB 8GB
Samsung M393B2G70BH0-YK0 16GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
A-DATA Technology AD73I1C1674EV 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CM3X1G1333C9 1GB
A-DATA Technology DQKD1A08 1GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Kingston 99U5428-018.A00LF 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
AMD R5316G1609U2K 8GB
Kingston 9905630-030.A00G 16GB
SK Hynix HMP125U6EFR8C-S6 2GB
SK Hynix MMA82GS6CJR8N-VK 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BL16G26C16U4W.16FD 16GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMSX16GX4M2A3200C22 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K43CB1-CTD 8GB
报告一个错误
×
Bug description
Source link