A-DATA Technology DQVE1908 512MB vs Samsung M378A2K43EB1-CWE 16GB

Overall score

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Overall score

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Differences Specifications Comments

Differences

A-DATA Technology DQVE1908 512MB

Reasons to consider
A-DATA Technology DQVE1908 512MB

Faster reading speed, GB/s

2 18.5

Average value in the tests

Samsung M378A2K43EB1-CWE 16GB

Reasons to consider
Samsung M378A2K43EB1-CWE 16GB

Below the latency in the PassMark tests, ns

33 66

Around -100% lower latency
Faster write speed, GB/s

13.8 1,557.9

Average value in the tests
Higher memory bandwidth, mbps

25600 6400

Around 4 higher bandwidth

Specifications

Complete list of technical specifications

A-DATA Technology DQVE1908 512MB

Samsung M378A2K43EB1-CWE 16GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

66 33
Read speed, GB/s

2,775.5 18.5
Write speed, GB/s

1,557.9 13.8
Memory bandwidth, mbps

6400 25600

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

382 3341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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