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A-DATA Technology DQVE1908 512MB
Samsung M393A2G40EB2-CTD 16GB

A-DATA Technology DQVE1908 512MB vs Samsung M393A2G40EB2-CTD 16GB

Overall score
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Overall score
star star star star star
Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Differences Specifications Comments

Differences

A-DATA Technology DQVE1908 512MB Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Samsung M393A2G40EB2-CTD 16GB Reasons to consider
Samsung M393A2G40EB2-CTD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 66
    Around -50% lower latency
  • Faster reading speed, GB/s
    8.5 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    5.6 left arrow 1,557.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Samsung M393A2G40EB2-CTD 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    66 left arrow 44
  • Read speed, GB/s
    2,775.5 left arrow 8.5
  • Write speed, GB/s
    1,557.9 left arrow 5.6
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    382 left arrow 1660

A-DATA Technology DQVE1908 512MB RAM comparisons

Qimonda ITC 1GB
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Samsung M393A2G40EB2-CTD 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

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