RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Micron Technology 4ATF51264AZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
15.6
Average value in the tests
Faster write speed, GB/s
2,061.2
11.2
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264AZ-2G3B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
46
Around -35% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
34
Read speed, GB/s
4,937.3
15.6
Write speed, GB/s
2,061.2
11.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
759
2468
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Micron Technology 4ATF51264AZ-2G3B1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KP4T2F-PSB 4GB
Kingston KF2666C16S4/16G 16GB
SK Hynix HYMP512S64CP8-Y5 1GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M4A2800C16 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3333C16-16GTZKW 16GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CB8GU2666.C8ET 8GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Panram International Corporation PUD42400C154G4NJK 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Corsair CMK64GX4M8X4200C19 8GB
Kingston KHX1600C9D3/4G 4GB
Kingston 9905702-204.A00G 8GB
Samsung M471B5673FH0-CF8 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Peak Electronics 256X64M-67E 2GB
V-GEN D4H8GL32A8TS 8GB
Report a bug
×
Bug description
Source link