RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
20.4
Average value in the tests
Faster write speed, GB/s
2,061.2
18.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
46
Around -156% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
18
Read speed, GB/s
4,937.3
20.4
Write speed, GB/s
2,061.2
18.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
759
3529
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
SpecTek Incorporated PSD34G13332 4GB
Kingston XJ69DF-MIE2 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Gloway International (HK) STK2400C15-16GB 16GB
Mushkin 991586 2GB
Transcend Information TS512MLH64V4H 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Samsung M393B5170FH0-CH9 4GB
Kingston KF3600C18D4/16GX 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Kingston 9965525-140.A00LF 8GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK8GX4M1D2666C16 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-2133C15-4GNT 4GB
Avant Technology F6451U64F9333G 4GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMR16GX4M2D3200C16 8GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3600C16-8GTRG 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Transcend Information JM2400HLB-8G 8GB
Report a bug
×
Bug description
Source link