RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
19.5
Average value in the tests
Faster write speed, GB/s
2,061.2
15.8
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
46
Around -142% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
19
Read speed, GB/s
4,937.3
19.5
Write speed, GB/s
2,061.2
15.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
759
3435
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Panram International Corporation D4N2400PS-8G 8GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
Kingston KHX1600C9D3/8G 8GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905624-010.A00G 4GB
Kingston 9965433-034.A00LF 4GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Report a bug
×
Bug description
Source link