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AMD R5316G1609U2K 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB

AMD R5316G1609U2K 8GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB

Overall score
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Overall score
star star star star star
Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Differences Specifications Comments

Differences

AMD R5316G1609U2K 8GB Reasons to consider
AMD R5316G1609U2K 8GB
Report a bug
Crucial Technology BLS4G4D240FSE.8FE 4GB Reasons to consider
Crucial Technology BLS4G4D240FSE.8FE 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    65 left arrow 73
    Around -12% lower latency
  • Faster reading speed, GB/s
    17.5 left arrow 6.3
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 5.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
AMD R5316G1609U2K 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 65
  • Read speed, GB/s
    6.3 left arrow 17.5
  • Write speed, GB/s
    5.2 left arrow 8.7
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1309 left arrow 1921

AMD R5316G1609U2K 8GB RAM comparisons

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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