RAM comparison AMD R5316G1609U2K 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

AMD R5316G1609U2K 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Overall score

AMD R5316G1609U2K 8GB

Overall score

Differences Specifications Comments

Reasons to consider
AMD R5316G1609U2K 8GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Below the latency in the PassMark tests, ns

28 73

Around -161% lower latency
Faster reading speed, GB/s

14.3 6.3

Average value in the tests
Faster write speed, GB/s

11.4 5.2

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Complete list of technical specifications

AMD R5316G1609U2K 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

1309 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns