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AMD R5316G1609U2K 8GB
Samsung M393A1G43EB1-CRC 8GB

AMD R5316G1609U2K 8GB vs Samsung M393A1G43EB1-CRC 8GB

Overall score
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Overall score
star star star star star
Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

Differences Specifications Comments

Differences

AMD R5316G1609U2K 8GB Reasons to consider
AMD R5316G1609U2K 8GB
Report a bug
Samsung M393A1G43EB1-CRC 8GB Reasons to consider
Samsung M393A1G43EB1-CRC 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    49 left arrow 73
    Around -49% lower latency
  • Faster reading speed, GB/s
    10.9 left arrow 6.3
    Average value in the tests
  • Faster write speed, GB/s
    8.3 left arrow 5.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
AMD R5316G1609U2K 8GB
Samsung M393A1G43EB1-CRC 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 49
  • Read speed, GB/s
    6.3 left arrow 10.9
  • Write speed, GB/s
    5.2 left arrow 8.3
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1309 left arrow 2413

AMD R5316G1609U2K 8GB RAM comparisons

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Samsung M393A1G43EB1-CRC 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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