RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Essencore Limited IM48GS88N26-JJJHA0 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Essencore Limited IM48GS88N26-JJJHA0 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
34
Around 26% lower latency
Faster reading speed, GB/s
16.1
14.7
Average value in the tests
Reasons to consider
Essencore Limited IM48GS88N26-JJJHA0 8GB
Report a bug
Faster write speed, GB/s
12.3
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
34
Read speed, GB/s
16.1
14.7
Write speed, GB/s
10.1
12.3
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
2552
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2864QZ3-CF7 1GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston 9905403-090.A01LF 4GB
Kingston 99U5663-006.A00G 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9965600-027.A01G 16GB
Samsung M3 78T2863QZS-CF7 1GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
Samsung 1600 CL10 Series 8GB
Ramaxel Technology RMUA5110MH78HAF-2666 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2800C17-8GIS 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M378A1K43BB1-CPB 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Kingston X5H5PW-MIE 8GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2666C15-4GVR 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston KV0M5R-MIE 8GB
Corsair VSA2GSDS667C4 2GB
Micron Technology 16G2666CL19 16GB
Samsung M471B5273CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Report a bug
×
Bug description
Source link