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Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
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Below the latency in the PassMark tests, ns
17
60
Around 72% lower latency
Faster reading speed, GB/s
22.8
7.8
Average value in the tests
Faster write speed, GB/s
15.4
2.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
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Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
60
Read speed, GB/s
22.8
7.8
Write speed, GB/s
15.4
2.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3391
1505
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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