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Corsair CMY8GX3M2A2666C10 4GB
Samsung M471A1K43DB1-CWE 8GB

Corsair CMY8GX3M2A2666C10 4GB vs Samsung M471A1K43DB1-CWE 8GB

Overall score
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Overall score
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Differences Specifications Comments

Differences

Corsair CMY8GX3M2A2666C10 4GB Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    17 left arrow 33
    Around 48% lower latency
  • Faster reading speed, GB/s
    22.8 left arrow 16.1
    Average value in the tests
  • Faster write speed, GB/s
    15.4 left arrow 13.0
    Average value in the tests
Samsung M471A1K43DB1-CWE 8GB Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Samsung M471A1K43DB1-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    17 left arrow 33
  • Read speed, GB/s
    22.8 left arrow 16.1
  • Write speed, GB/s
    15.4 left arrow 13.0
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    3391 left arrow 2987

Corsair CMY8GX3M2A2666C10 4GB RAM comparisons

Micron Technology 4ATF1G64AZ-3G2B1 8GB
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Samsung M471A1K43DB1-CWE 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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