RAM comparison Corsair CMZ16GX3M2A2400C10 8GB vs Samsung M378A1K43EB2-CWE 8GB

Corsair CMZ16GX3M2A2400C10 8GB vs Samsung M378A1K43EB2-CWE 8GB

Overall score

Corsair CMZ16GX3M2A2400C10 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Corsair CMZ16GX3M2A2400C10 8GB

Reasons to consider
Samsung M378A1K43EB2-CWE 8GB

Below the latency in the PassMark tests, ns

33 37

Around -12% lower latency
Faster reading speed, GB/s

17.6 11.4

Average value in the tests
Faster write speed, GB/s

12.0 7.4

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42 higher bandwidth

Complete list of technical specifications

Corsair CMZ16GX3M2A2400C10 8GB

Samsung M378A1K43EB2-CWE 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1683 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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