RAM comparison Corsair CMZ16GX3M2A2400C10 8GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Corsair CMZ16GX3M2A2400C10 8GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Overall score

Corsair CMZ16GX3M2A2400C10 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Corsair CMZ16GX3M2A2400C10 8GB

Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Below the latency in the PassMark tests, ns

23 37

Around -61% lower latency
Faster reading speed, GB/s

18.1 11.4

Average value in the tests
Faster write speed, GB/s

15.0 7.4

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Complete list of technical specifications

Corsair CMZ16GX3M2A2400C10 8GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

1683 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns