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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Overall score
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Overall score
star star star star star
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Differences Specifications Comments

Differences

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    23 left arrow 27
    Around -17% lower latency
  • Faster reading speed, GB/s
    18.1 left arrow 16.7
    Average value in the tests
  • Faster write speed, GB/s
    15.0 left arrow 11.8
    Average value in the tests

Specifications

Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 23
  • Read speed, GB/s
    16.7 left arrow 18.1
  • Write speed, GB/s
    11.8 left arrow 15.0
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2756 left arrow 3317

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons

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Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM comparisons

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