RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Compare
Crucial Technology BLE4G3D1608DE1TX0. 4GB vs G Skill Intl F4-3200C14-16GTZSK 16GB
Overall score
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Overall score
G Skill Intl F4-3200C14-16GTZSK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-16GTZSK 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
34
Around -31% lower latency
Faster reading speed, GB/s
19
16.2
Average value in the tests
Faster write speed, GB/s
17.1
9.7
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
26
Read speed, GB/s
16.2
19.0
Write speed, GB/s
9.7
17.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2636
4022
Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM comparisons
Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905458-017.A01LF 4GB
SK Hynix HMA82GU6CJR8N-VK 16GB
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
SK Hynix HMT41GU7MFR8A-H9 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Corsair CMX8GX3M2A2000C9 4GB
EVGA 16G-D4-2400-MR 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Samsung M393B1K70QB0-CK0 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Avant Technology F641GU67F9333G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M391A1K43BB1-CRC 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905598-028.A00G 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Kingston 9905471-001.A01LF 2GB
Netac Technology Co Ltd E40832A 8GB
Report a bug
×
Bug description
Source link