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Crucial Technology BLS8G3N18AES4.16FE 8GB
Maxsun MSD44G24Q0 4GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Maxsun MSD44G24Q0 4GB

Overall score
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Overall score
star star star star star
Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

Differences Specifications Comments

Differences

Crucial Technology BLS8G3N18AES4.16FE 8GB Reasons to consider
Crucial Technology BLS8G3N18AES4.16FE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    42 left arrow 66
    Around 36% lower latency
  • Faster write speed, GB/s
    9.4 left arrow 7.4
    Average value in the tests
Maxsun MSD44G24Q0 4GB Reasons to consider
Maxsun MSD44G24Q0 4GB
Report a bug
  • Faster reading speed, GB/s
    15.5 left arrow 13.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Maxsun MSD44G24Q0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 66
  • Read speed, GB/s
    13.2 left arrow 15.5
  • Write speed, GB/s
    9.4 left arrow 7.4
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2326 left arrow 1812

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM comparisons

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Maxsun MSD44G24Q0 4GB RAM comparisons

Apacer Technology AQD-D4U8GN24-SE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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