Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Overall score
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Differences

  • Faster reading speed, GB/s
    13.2 left arrow 12.4
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    28 left arrow 42
    Around -50% lower latency
  • Faster write speed, GB/s
    9.6 left arrow 9.4
    Average value in the tests

Specifications

Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    42 left arrow 28
  • Read speed, GB/s
    13.2 left arrow 12.4
  • Write speed, GB/s
    9.4 left arrow 9.6
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2326 left arrow 2329
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons