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Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Punteggio complessivo
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Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Punteggio complessivo
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Differenze Specifiche tecniche Commenti

Differenze

Crucial Technology BLS8G3N18AES4.16FE 8GB Motivi da considerare
Crucial Technology BLS8G3N18AES4.16FE 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.2 left arrow 12.4
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    28 left arrow 42
    Intorno -50% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    9.6 left arrow 9.4
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    42 left arrow 28
  • Velocità di lettura, GB/s
    13.2 left arrow 12.4
  • Velocità di scrittura, GB/s
    9.4 left arrow 9.6
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2326 left arrow 2329

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RAM Latency Calculator
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