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Crucial Technology BLT2G3D1608DT1TX0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Compare
Crucial Technology BLT2G3D1608DT1TX0 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Overall score
Crucial Technology BLT2G3D1608DT1TX0 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLT2G3D1608DT1TX0 2GB
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Below the latency in the PassMark tests, ns
23
38
Around 39% lower latency
Faster reading speed, GB/s
13.6
9.4
Average value in the tests
Faster write speed, GB/s
9.4
8.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
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Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLT2G3D1608DT1TX0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
38
Read speed, GB/s
13.6
9.4
Write speed, GB/s
9.4
8.3
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2096
2110
Crucial Technology BLT2G3D1608DT1TX0 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
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