RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Compare
Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB
Overall score
Crucial Technology CT51264BD1339.M16F 4GB
Overall score
Crucial Technology BLS4G4D240FSE.8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
65
Around 62% lower latency
Reasons to consider
Crucial Technology BLS4G4D240FSE.8FE 4GB
Report a bug
Faster reading speed, GB/s
17.5
12.1
Average value in the tests
Faster write speed, GB/s
8.7
8.6
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
65
Read speed, GB/s
12.1
17.5
Write speed, GB/s
8.6
8.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2045
1921
Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor FLFE85F-C8KM9 2GB
INTENSO 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Transcend Information TS2GLH64V6B 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD16GX4M2B2400C10 8GB
Samsung M471B1G73EB0-YK0 8GB
SK Hynix HMA84GL7AMR4N-TF 32GB
Kingston 99U5584-001.A00LF 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited KD48GU881-26N190D 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Samsung M393B1G70QH0-YK0 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M471A2K43CBCBCRC 16GB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-3600C14-16GTZR 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Kingston 9905403-515.A00LF 8GB
Maxsun MSD416G26Q3 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5700-032.A00G 16GB
Report a bug
×
Bug description
Source link