RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD1339.M16F 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Compare
Crucial Technology CT51264BD1339.M16F 4GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Overall score
Crucial Technology CT51264BD1339.M16F 4GB
Overall score
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
50
Around 50% lower latency
Faster write speed, GB/s
8.6
7.3
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Report a bug
Faster reading speed, GB/s
12.5
12.1
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
50
Read speed, GB/s
12.1
12.5
Write speed, GB/s
8.6
7.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2045
2326
Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C15-8GTZKW 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Kingston 99U5701-036.A00G 16GB
A-DATA Technology DQKD1A08 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMW64GX4M4K3600C18 16GB
Kingston 9905403-437.A01LF 4GB
Essencore Limited KD44GU480-26N160T 4GB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology DDR4 2666 8GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX4800C19D4/8GX 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Team Group Inc. UD5-6400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
×
Bug description
Source link