RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD1339.M16F 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Compare
Crucial Technology CT51264BD1339.M16F 4GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Overall score
Crucial Technology CT51264BD1339.M16F 4GB
Overall score
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
50
Around 50% lower latency
Faster write speed, GB/s
8.6
7.3
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Report a bug
Faster reading speed, GB/s
12.5
12.1
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
50
Read speed, GB/s
12.1
12.5
Write speed, GB/s
8.6
7.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2045
2326
Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R538G1601U2S-UO 8GB
Corsair CMK16GX4M1A2666C16 16GB
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Kingston 9905403-011.A03LF 2GB
Kingston HP32D4U8S8ME-8XR 8GB
Kingston KF552C40-16 16GB
Apacer Technology 78.DAGRL.4050C 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3333C16-8GVR 8GB
Samsung M378B5273CH0-CH9 4GB
Kingston HP26D4S9S8MHF-8 8GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3600C14-8GVKA 8GB
Apacer Technology 78.01GA0.9K5 1GB
Asgard VMA45UG-MEC1U2AW2 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A1K43EB2-CVF 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Essencore Limited IM48GU48N21-FFFHM 8GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMK16GX4M2K4133C19 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Apacer Technology 78.CAGP7.C7C0B 8GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M393A5143DB0-CPB 4GB
Report a bug
×
Bug description
Source link