RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD1339.M16F 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Compare
Crucial Technology CT51264BD1339.M16F 4GB vs Mushkin MR[ABC]4U360JNNM8G 8GB
Overall score
Crucial Technology CT51264BD1339.M16F 4GB
Overall score
Mushkin MR[ABC]4U360JNNM8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around 11% lower latency
Reasons to consider
Mushkin MR[ABC]4U360JNNM8G 8GB
Report a bug
Faster reading speed, GB/s
19.8
12.1
Average value in the tests
Faster write speed, GB/s
14.5
8.6
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
28
Read speed, GB/s
12.1
19.8
Write speed, GB/s
8.6
14.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2045
3650
Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CM2X1024-8500C5D 1GB
Corsair CMK8GX4M1A2400C16 8GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4000C15-8GTRS 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Kingston 9905403-515.A00LF 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G30C15U4B.16FE 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMD32GX4M4B2133C10 8GB
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CB8GU2400.C8D 8GB
TwinMOS 8D7T5MK8-TATP 2GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMD8GX4M2B3866C18 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-4400C19-32GTZR 32GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Report a bug
×
Bug description
Source link