RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD160B.C16F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
Crucial Technology CT51264BD160B.C16F 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
Crucial Technology CT51264BD160B.C16F 4GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD160B.C16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
41
73
Around 44% lower latency
Faster write speed, GB/s
9.7
7.9
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Faster reading speed, GB/s
15.1
13.9
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD160B.C16F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
73
Read speed, GB/s
13.9
15.1
Write speed, GB/s
9.7
7.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2366
1724
Crucial Technology CT51264BD160B.C16F 4GB RAM comparisons
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2133C15-8GNS 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston HP32D4U8S8HC-8XR 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Kingston KP4T2F-PSB 4GB
Samsung M471A2K43BB1-CRC 16GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-3200C16-8GRKB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
Kingston ACR256X64D3S1333C9 2GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905713-035.A00G 8GB
A-DATA Technology DQKD1A08 1GB
Avant Technology W6451U48J7240N6 4GB
SK Hynix HYMP112S64CP6-S6 1GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2666C19-8GSXK 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Report a bug
×
Bug description
Source link