RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Compare
Elpida EBJ40UG8EFU0-GN-F 4GB vs Crucial Technology CT16G4DFD824A.M16FE 16GB
Overall score
Elpida EBJ40UG8EFU0-GN-F 4GB
Overall score
Crucial Technology CT16G4DFD824A.M16FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ40UG8EFU0-GN-F 4GB
Report a bug
Reasons to consider
Crucial Technology CT16G4DFD824A.M16FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
43
Around -65% lower latency
Faster reading speed, GB/s
15.9
12.7
Average value in the tests
Faster write speed, GB/s
11.1
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
26
Read speed, GB/s
12.7
15.9
Write speed, GB/s
8.0
11.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2057
2855
Elpida EBJ40UG8EFU0-GN-F 4GB RAM comparisons
Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
Crucial Technology CT16G4DFD824A.M16FE 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3300C16-16GTZSW 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C19-8GTZKW 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston ACR24D4U7S8MB-8 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Samsung M395T2863QZ4-CF76 1GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
PUSKILL DDR3 1600 8G 8GB
Teikon TMA851S6CJR6N-VKSC 4GB
Qimonda 64T128020EDL2.5C2 1GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
A-DATA Technology ADOVE1A0834E 1GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Qimonda 72T128420EFA3SB2 1GB
G Skill Intl F4-3200C22-32GRS 32GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) 2400 C17 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C15-16GVK 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Apacer Technology GD2.1527WT.001 8GB
Report a bug
×
Bug description
Source link