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Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

Overall score
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Overall score
star star star star star
Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Differences Specifications Comments

Differences

Elpida EBJ40UG8EFU0-GN-F 4GB Reasons to consider
Elpida EBJ40UG8EFU0-GN-F 4GB
Report a bug
Samsung V-GeN D4S16GL26A8TL6 16GB Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 43
    Around -34% lower latency
  • Faster reading speed, GB/s
    16 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    13.4 left arrow 8.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 32
  • Read speed, GB/s
    12.7 left arrow 16.0
  • Write speed, GB/s
    8.0 left arrow 13.4
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2057 left arrow 1897

Elpida EBJ40UG8EFU0-GN-F 4GB RAM comparisons

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

Samsung V-GeN D4S16GL26A8TL6 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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