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EVGA 16G-D3-1600-MR 8GB
Micron Technology 4ATF51264AZ-3G2E1 4GB

EVGA 16G-D3-1600-MR 8GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

Overall score
star star star star star
EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

Overall score
star star star star star
Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Differences Specifications Comments

Differences

EVGA 16G-D3-1600-MR 8GB Reasons to consider
EVGA 16G-D3-1600-MR 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 48
    Around 31% lower latency
  • Faster write speed, GB/s
    9.1 left arrow 8.3
    Average value in the tests
Micron Technology 4ATF51264AZ-3G2E1 4GB Reasons to consider
Micron Technology 4ATF51264AZ-3G2E1 4GB
Report a bug
  • Faster reading speed, GB/s
    17.5 left arrow 14.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
EVGA 16G-D3-1600-MR 8GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 48
  • Read speed, GB/s
    14.3 left arrow 17.5
  • Write speed, GB/s
    9.1 left arrow 8.3
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2667 left arrow 2196

EVGA 16G-D3-1600-MR 8GB RAM comparisons

Samsung M378B1G73BH0-CK0 8GB
EVGA 16G-D4-2666-MR 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB RAM comparisons

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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