RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMWX8GF2666C16W4 8GB
Compare
G Skill Intl F2-8500CL5-2GBPI 2GB vs Corsair CMWX8GF2666C16W4 8GB
Overall score
G Skill Intl F2-8500CL5-2GBPI 2GB
Overall score
Corsair CMWX8GF2666C16W4 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-8500CL5-2GBPI 2GB
Report a bug
Faster reading speed, GB/s
6
13.4
Average value in the tests
Reasons to consider
Corsair CMWX8GF2666C16W4 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
45
Around -73% lower latency
Faster write speed, GB/s
9.9
2,935.8
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMWX8GF2666C16W4 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
45
26
Read speed, GB/s
6,336.8
13.4
Write speed, GB/s
2,935.8
9.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1144
2563
G Skill Intl F2-8500CL5-2GBPI 2GB RAM comparisons
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Corsair CMWX8GF2666C16W4 8GB RAM comparisons
Samsung M378A1G43EB1-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK32GX4M4K4333C19 8GB
Samsung M378B5173BH0-CH9 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C17-8GVK 8GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology M471A1K43BB1-CRC 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMT64GX4M4C3000C15 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMD64GX4M4B3333C16 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905712-010.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MRA4S320GJJM16G 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
Panram International Corporation W4U2666P-8G 8GB
Kingston KN2M64-ETB 8GB
G Skill Intl F4-2400C17-8GIS 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMD32GX4M4B3600C16 8GB
Infineon (Siemens) 64T32000HU3.7A 256MB
G Skill Intl F4-4400C19-16GVK 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX3200C16D4/4GX 4GB
Report a bug
×
Bug description
Source link