RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Compare
G Skill Intl F2-8500CL5-2GBPI 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Overall score
G Skill Intl F2-8500CL5-2GBPI 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-8500CL5-2GBPI 2GB
Report a bug
Faster reading speed, GB/s
6
16.2
Average value in the tests
Faster write speed, GB/s
2,935.8
12.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
45
Around -61% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
45
28
Read speed, GB/s
6,336.8
16.2
Write speed, GB/s
2,935.8
12.7
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1144
2417
G Skill Intl F2-8500CL5-2GBPI 2GB RAM comparisons
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT16G4SFD8266 16GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M471A2K43EB1-CWE 16GB
G Skill Intl F5-6400J3239G16G 16GB
Super Talent F3200UA8G 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston 9905624-008.A00G 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905713-001.A00G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Golden Empire CL15-15-15 D4-3000 8GB
Kingston 9965525-018.A00LF 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Kingston 9905471-001.A01LF 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Transcend Information JM3200HLB-16G 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
A-DATA Technology DDR4 3000 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Report a bug
×
Bug description
Source link