RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Compare
G Skill Intl F2-8500CL5-2GBPI 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Overall score
G Skill Intl F2-8500CL5-2GBPI 2GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-8500CL5-2GBPI 2GB
Report a bug
Below the latency in the PassMark tests, ns
45
74
Around 39% lower latency
Faster reading speed, GB/s
6
13.6
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Report a bug
Faster write speed, GB/s
7.7
2,935.8
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-8500CL5-2GBPI 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
45
74
Read speed, GB/s
6,336.8
13.6
Write speed, GB/s
2,935.8
7.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1144
1616
G Skill Intl F2-8500CL5-2GBPI 2GB RAM comparisons
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P21FC8R2-BRGS 8GB
SK Hynix HYMP564U64CP8-C4 512MB
Corsair CMSX8GX4M2A2400C16 4GB
Kingston 99U5429-014.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
A-DATA Technology AX5U5200C3816G-B 16GB
A-DATA Technology AX5U6000C4016G-B 16GB
Kingston KHX1600C9D3/4G 4GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965600-033.A00G 16GB
Samsung M391B1G73BH0-CK0 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965600-012.A02G 16GB
Samsung M471A2K43EB1-CWE 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMV4GX3M1B1600C11 4GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Kingston KHX1600C9S3L/8G 8GB
Kingston CBD24D4S7D8ME-16 16GB
Samsung M393B5170FH0-CH9 4GB
Kingston 9905701-003.A00G 16GB
Kingston 9905403-134.A00LF 2GB
V-Color Technology Inc. TC416G24D817 16GB
Report a bug
×
Bug description
Source link