RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-12800CL7-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Compare
G Skill Intl F3-12800CL7-4GBXM 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Overall score
G Skill Intl F3-12800CL7-4GBXM 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-12800CL7-4GBXM 4GB
Report a bug
Below the latency in the PassMark tests, ns
36
56
Around 36% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
Faster reading speed, GB/s
20.1
14.8
Average value in the tests
Faster write speed, GB/s
10.5
8.7
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-12800CL7-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
36
56
Read speed, GB/s
14.8
20.1
Write speed, GB/s
8.7
10.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2481
2455
G Skill Intl F3-12800CL7-4GBXM 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR16N11/8-SP 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston CBD24D4U7S8MA-8 8GB
Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Samsung M471A4G43MB1-CTD 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Kingston KF3200C20S4/8G 8GB
Samsung M471B5173EB0-YK0 4GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Report a bug
×
Bug description
Source link