RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M393A1G43EB1-CRC 8GB
Compare
G Skill Intl F3-14900CL8-4GBXM 4GB vs Samsung M393A1G43EB1-CRC 8GB
Overall score
G Skill Intl F3-14900CL8-4GBXM 4GB
Overall score
Samsung M393A1G43EB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-14900CL8-4GBXM 4GB
Report a bug
Below the latency in the PassMark tests, ns
31
49
Around 37% lower latency
Faster reading speed, GB/s
17.4
10.9
Average value in the tests
Faster write speed, GB/s
10.9
8.3
Average value in the tests
Reasons to consider
Samsung M393A1G43EB1-CRC 8GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M393A1G43EB1-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
31
49
Read speed, GB/s
17.4
10.9
Write speed, GB/s
10.9
8.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2735
2413
G Skill Intl F3-14900CL8-4GBXM 4GB RAM comparisons
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Samsung M393A1G43EB1-CRC 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CM3X8GA2400C11Y2R 8GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Kingston 9905403-156.A00LF 2GB
Kingston KST-2133MHZ-4G 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
G Skill Intl F5-5600J4040C16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C14-16GTZSK 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Essencore Limited KD48GU880-32A160T 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3000C14-8GTZR 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Samsung M471A1K43CB1-CRC 8GB
Mushkin 996902 2GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Report a bug
×
Bug description
Source link