RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Compare
G Skill Intl F3-2800C12-8GTXDG 8GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB
Overall score
G Skill Intl F3-2800C12-8GTXDG 8GB
Overall score
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2800C12-8GTXDG 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
37
Around 43% lower latency
Faster reading speed, GB/s
17.4
9.6
Average value in the tests
Faster write speed, GB/s
12.2
7.8
Average value in the tests
Reasons to consider
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Report a bug
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
21
37
Read speed, GB/s
17.4
9.6
Write speed, GB/s
12.2
7.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3130
2082
G Skill Intl F3-2800C12-8GTXDG 8GB RAM comparisons
Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX2666C16D4/32GX 32GB
Kingston K531R8-MIN 4GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMW32GX4M2C3466C16 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
DSL Memory D4SH1G081SH26A-C 8GB
Samsung M393B5170FH0-CH9 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Samsung M395T2863QZ4-CF76 1GB
DSL Memory D4SH1G081SH26A-C 8GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Team Group Inc. Team-Value-800 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Kingston 9965525-018.A00LF 4GB
Hewlett-Packard 7TE39AA#ABC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin 99[2/7/4]192[F/T] 4GB
Report a bug
×
Bug description
Source link