RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Compare
G Skill Intl F4-4000C14-16GTZR 16GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
Overall score
G Skill Intl F4-4000C14-16GTZR 16GB
Overall score
Micron Technology 4ATF51264HZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F4-4000C14-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
35
Around 17% lower latency
Faster reading speed, GB/s
24
14.8
Average value in the tests
Faster write speed, GB/s
20.0
11.2
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
35
Read speed, GB/s
24.0
14.8
Write speed, GB/s
20.0
11.2
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
4156
2336
G Skill Intl F4-4000C14-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
AMD AE34G2139U2 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CB8GS2400.C8D 8GB
Kingston KN2M64-ETB 8GB
Kingston 9905598-044.A00G 16GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M471A5244CB0-CWE 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Samsung M3 78T2863EHS-CF7 1GB
Transcend Information TS1GSH64V4B 8GB
Kingston 9905469-143.A00LF 4GB
Samsung M393B5170FH0-CK0 4GB
Samsung M395T2863QZ4-CF76 1GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX2400C14S4/16G 16GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMT32GX4M4K4000C19 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK64GX4M4B3466C16 16GB
Report a bug
×
Bug description
Source link