RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hexon Technology Pte Ltd HEXON 1GB
PUSKILL PJ16TFK1GM8 16GB

Hexon Technology Pte Ltd HEXON 1GB vs PUSKILL PJ16TFK1GM8 16GB

Overall score
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Overall score
star star star star star
PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

Differences Specifications Comments

Differences

Hexon Technology Pte Ltd HEXON 1GB Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 12.7
    Average value in the tests
PUSKILL PJ16TFK1GM8 16GB Reasons to consider
PUSKILL PJ16TFK1GM8 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    41 left arrow 62
    Around -51% lower latency
  • Faster write speed, GB/s
    10.7 left arrow 1,843.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
PUSKILL PJ16TFK1GM8 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 41
  • Read speed, GB/s
    3,556.6 left arrow 12.7
  • Write speed, GB/s
    1,843.6 left arrow 10.7
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    542 left arrow 2621

Hexon Technology Pte Ltd HEXON 1GB RAM comparisons

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

PUSKILL PJ16TFK1GM8 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
Memory RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Memory RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C15-4GVR 4GB
G Skill Intl F4-2400C15-4GVR 4GB
Memory RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
Memory RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation W4U2133PS-8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
Memory RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X8GE2400C16K4 8GB
Corsair CM4X8GE2400C16K4 8GB
Memory RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Memory RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
Memory RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4000C18-16GTRS 16GB
G Skill Intl F4-4000C18-16GTRS 16GB
Memory RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 9905663-005.A00G 16GB
Kingston 9905663-005.A00G 16GB
Memory RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Memory RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Memory RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3000C15-8GTZR 8GB
G Skill Intl F4-3000C15-8GTZR 8GB
Memory RAM