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Hexon Technology Pte Ltd HEXON 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
Below the latency in the PassMark tests, ns
62
71
Around 13% lower latency
Faster reading speed, GB/s
3
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster write speed, GB/s
6.4
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
71
Read speed, GB/s
3,556.6
15.6
Write speed, GB/s
1,843.6
6.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
542
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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