Hexon Technology Pte Ltd HEXON 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Overall score
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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences

  • Below the latency in the PassMark tests, ns
    62 left arrow 71
    Around 13% lower latency
  • Faster reading speed, GB/s
    3 left arrow 15.6
    Average value in the tests
  • Faster write speed, GB/s
    6.4 left arrow 1,843.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 71
  • Read speed, GB/s
    3,556.6 left arrow 15.6
  • Write speed, GB/s
    1,843.6 left arrow 6.4
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    542 left arrow 1650
RAM Latency Calculator
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