RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-019.A00G 8GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston 9905702-019.A00G 8GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
Kingston 9905702-019.A00G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
87
Around 69% lower latency
Faster reading speed, GB/s
16.7
12.6
Average value in the tests
Faster write speed, GB/s
11.8
9.8
Average value in the tests
Reasons to consider
Kingston 9905702-019.A00G 8GB
Report a bug
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-019.A00G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
87
Read speed, GB/s
16.7
12.6
Write speed, GB/s
11.8
9.8
Memory bandwidth, mbps
21300
21300
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2756
1849
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Kingston 9905702-019.A00G 8GB RAM comparisons
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMR16GX4M2Z2933C16 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CM4X16GE2400C16S4 16GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Hexon Technology Pte Ltd HEXON 1GB
MDT Technologies GmbH MDT 512M DDR2-66 512MB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
AMD AE34G1601U1 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A2G40EB1-CPB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3466C16-8GTZ 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramsta Ramsta-2666MHz-4G 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Corsair CMX8GX3M2A2000C9 4GB
Kingston KHX2133C11D3/8GX 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M471A5143EB0-CPB 4GB
Report a bug
×
Bug description
Source link