RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
46
Around 41% lower latency
Faster reading speed, GB/s
16.7
11
Average value in the tests
Faster write speed, GB/s
11.8
9.1
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Report a bug
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
46
Read speed, GB/s
16.7
11.0
Write speed, GB/s
11.8
9.1
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2756
2396
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C18-8GRS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CM4X8GE3000C15K4 8GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA451U7MFR8N-TF 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston 9905625-011.A00G 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-4GIS 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Apacer Technology GD2.1527WH.002 8GB
AMD R5316G1609U2K 8GB
Corsair CMD32GX4M4C3466C16W 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Kingston KP223C-ELD 2GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Report a bug
×
Bug description
Source link