Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M378A1G44BB0-CWE 8GB

Overall score

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Overall score

Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

Differences Specifications Comments

Differences

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Below the latency in the PassMark tests, ns

27 35

Around 23% lower latency
Faster reading speed, GB/s

16.7 15.1

Average value in the tests
Faster write speed, GB/s

11.8 9.2

Average value in the tests

Samsung M378A1G44BB0-CWE 8GB

Reasons to consider
Samsung M378A1G44BB0-CWE 8GB

Higher memory bandwidth, mbps

25600 21300

Around 1.2 higher bandwidth

Specifications

Complete list of technical specifications

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A1G44BB0-CWE 8GB

Main characteristics

Memory type

DDR4 DDR4
Latency in PassMark, ns

27 35
Read speed, GB/s

16.7 15.1
Write speed, GB/s

11.8 9.2
Memory bandwidth, mbps

21300 25600

Other

Description

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2756 2488

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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