Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Overall score
star star star star star
Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Differences

  • Below the latency in the PassMark tests, ns
    34 left arrow 41
    Around 17% lower latency
  • Faster reading speed, GB/s
    11.7 left arrow 8.6
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 5.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    34 left arrow 41
  • Read speed, GB/s
    8.6 left arrow 11.7
  • Write speed, GB/s
    5.8 left arrow 9.5
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1682 left arrow 2058
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons