RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
71
Around 52% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Report a bug
Faster reading speed, GB/s
15.5
8.6
Average value in the tests
Faster write speed, GB/s
8.3
5.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
71
Read speed, GB/s
8.6
15.5
Write speed, GB/s
5.8
8.3
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1682
1902
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Hewlett-Packard 7EH64AA#ABC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Corsair CMX4GX3M2A1600C9 2GB
AMD R748G2400U2S 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M471A2K43BB1-CTD 16GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK8GX4M2B3000C15 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3333C16-8GTZB 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMD32GX4M4B3733C17 8GB
Samsung M471B5173DB0-YK0 4GB
Samsung M471A1G44BB0-CWE 8GB
AMD R5S38G1601U2S 8GB
Kingston 99U5743-031.A00G 16GB
A-DATA Technology DQVE1908 512MB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Crucial Technology ST51264BA1339.16FK 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C
Report a bug
×
Bug description
Source link