RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3200C14-8GVR 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-3200C14-8GVR 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
G Skill Intl F4-3200C14-8GVR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-8GVR 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
28
Around -22% lower latency
Faster reading speed, GB/s
20.6
12.4
Average value in the tests
Faster write speed, GB/s
16.2
9.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3200C14-8GVR 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
23
Read speed, GB/s
12.4
20.6
Write speed, GB/s
9.6
16.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2329
3819
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-3200C14-8GVR 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5595-005.A00LF 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9965643-006.A01G 8GB
Samsung M393B5170FH0-CK0 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMR64GX4M8C3000C15 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Kingston KHX1600C9S3L/8G 8GB
Corsair CMK32GX4M2B3000C15 16GB
Kingston 9905403-038.A00LF 4GB
Kingston 9905663-008.A00G 16GB
Kingston 99U5584-004.A00LF 4GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMK16GX4M2C3200C16 8GB
Report a bug
×
Bug description
Source link