RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-3200C16-8GSXKB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
G Skill Intl F4-3200C16-8GSXKB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C16-8GSXKB 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around -12% lower latency
Faster reading speed, GB/s
20
12.4
Average value in the tests
Faster write speed, GB/s
16.0
9.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
25
Read speed, GB/s
12.4
20.0
Write speed, GB/s
9.6
16.0
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2329
3771
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-3200C16-8GSXKB 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Transcend Information JM3200HLB-8G 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M393A2G40EB1-CRC 16GB
Kingston 9905471-002.A00LF 2GB
Corsair CM4X16GE2133C15S2 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston KV0M5R-MIE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Qimonda 64T128020EDL2.5C2 1GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Kingston 99U5474-023.A00LF 4GB
Panram International Corporation W4U2400PS-4G 4GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Samsung M471B5273CH0-CH9 4GB
Kingston ACR32D4U2S8ME-16 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Report a bug
×
Bug description
Source link