RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
29
Around -26% lower latency
Faster reading speed, GB/s
17.2
12.1
Average value in the tests
Faster write speed, GB/s
13.0
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
23
Read speed, GB/s
12.1
17.2
Write speed, GB/s
7.8
13.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2177
3004
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM comparisons
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-038.A00LF 4GB
Corsair CMK8GX4M1Z3200C16 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMU16GX4M2D3000C16 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CM4X4GF2133C15S2 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
Kingston 9905471-002.A00LF 2GB
Corsair CMD64GX4M4B2800C14 16GB
Samsung DDR3 8GB 1600MHz 8GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
Kingston 99U5584-004.A00LF 4GB
Corsair CM4X16GE2666Z16K4 16GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CMR16GX4M2Z3200C16 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CB16GS2400.C16J 16GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK16GX4M4B3733C17 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
AMD R5316G1609U2K 8GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 99U5663-003.A00G 16GB
Report a bug
×
Bug description
Source link