Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Overall score
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Differences

  • Below the latency in the PassMark tests, ns
    29 left arrow 30
    Around 3% lower latency
  • Faster reading speed, GB/s
    16.9 left arrow 13.4
    Average value in the tests
  • Faster write speed, GB/s
    13.4 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 30
  • Read speed, GB/s
    13.4 left arrow 16.9
  • Write speed, GB/s
    9.0 left arrow 13.4
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2423 left arrow 3257
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons